Depth control of a silicon structure fabricated by...

Depth control of a silicon structure fabricated by 100q keV Ar ion beam lithography

Noritaka Kawasegi, Noboru Morita, Shigeru Yamada, Noboru Takano, Tatsuo Oyama, Sadao Momota, Jun Taniguchi, Iwao Miyamoto
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Volume:
253
Year:
2007
Language:
english
Pages:
8
DOI:
10.1016/j.apsusc.2006.07.037
File:
PDF, 1.24 MB
english, 2007
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