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Silicon carbonitride by remote microwave plasma CVD from organosilicon precursor: Growth mechanism and structure of resulting Si:C:N films
I. Blaszczyk-Lezak, A.M. Wrobel, M.P.M. Kivitorma, I.J. Vayrynen, A. TraczVolume:
253
Year:
2007
Language:
english
Pages:
8
DOI:
10.1016/j.apsusc.2007.02.193
File:
PDF, 1.03 MB
english, 2007