Enhancement of photoluminescence intensity from Si nanodots...

Enhancement of photoluminescence intensity from Si nanodots using Al2O3 surface passivation layer grown by atomic layer deposition

Edward Sun, Fu-Hsiang Su, Ching-Huang Chen, Miin-Jang Chen
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Volume:
256
Year:
2010
Language:
english
Pages:
4
DOI:
10.1016/j.apsusc.2010.03.047
File:
PDF, 452 KB
english, 2010
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