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Structural and electrical characterization of the nickel silicide films formed at 850 °C by rapid thermal annealing of the Ni/Si(1 0 0) films
G. Utlu, N. Artunç, S. Budak, S. TariVolume:
256
Year:
2010
Language:
english
Pages:
7
DOI:
10.1016/j.apsusc.2010.03.062
File:
PDF, 1.15 MB
english, 2010