Si[sub 3]N[sub 4]/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors
Hu, X., Koudymov, A., Simin, G., Yang, J., Khan, M. Asif, Tarakji, A., Shur, M. S., Gaska, R.Volume:
79
Year:
2001
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.1412591
File:
PDF, 333 KB
english, 2001