Phase separation of thick (∼1 µm) In x Ga 1− x N ( x ∼ 0.3) grown on AlN/Si(111): Simultaneous emergence of metallic In–Ga and GaN-rich InGaN
Yamamoto, Akio, Hasan, Md. Tanvir, Mihara, Akihiro, Narita, Norihiko, Shigekawa, Naoteru, Kuzuhara, MasakiVolume:
7
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/apex.7.035502
Date:
March, 2014
File:
PDF, 716 KB
english, 2014