High rate dry etching of (BiSb)2Te3 film by CH4/H2-based...

Applied Surface Science 2014 / 10 Vol. 317

High rate dry etching of (BiSb)2Te3 film by CH4/H2-based plasma

Song, Junqiang, Shi, Xun, Chen, Lidong
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Volume:
317
Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2014.08.150
Date:
October, 2014
File:
PDF, 1.09 MB
english, 2014
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