Initial results for epitaxial growth of InN on gallium...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2014 / 05 Vol. 32; Iss. 3

Initial results for epitaxial growth of InN on gallium oxide and improved Migration-Enhanced Afterglow Epitaxy growth on gallium nitride

Gergova, Rositsa, Butcher, Kenneth Scott Alexander, Binsted, Peter W., Gogova, Daniela
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Volume:
32
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.4874535
Date:
May, 2014
File:
PDF, 1.00 MB
english, 2014
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