Improvement of 1.5 µm Photoluminescence from Reactive...

Japanese Journal of Applied Physics 1999 / 6 Vol. 38; Iss. Part 2, No

Improvement of 1.5 µm Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi 2 Balls in Si by High Temperature Annealing

Suemasu, Takashi, Iikura, Yusuke, Fujii, Tetsuo, Takakura, Ken'ichiro, Hiroi, Noriyoshi, Hasegawa, Fumio
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Volume:
38
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.38.l620
Date:
June, 1999
File:
PDF, 175 KB
english, 1999
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