Study of the n + GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance
Pei, Yi, Shen, Likun, Palacios, Tomas, Fichtenbaum, Nicholas A., Mccarthy, Lee S., Keller, Stacia, DenBaars, Steven P., Mishra, Umesh K.Volume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.46.l842
Date:
September, 2007
File:
PDF, 941 KB
english, 2007