Conduction and Valence Band Edges of Porous Silicon...

Journal of the American Chemical Society 1996 / 01 Vol. 118; Iss. 18

Conduction and Valence Band Edges of Porous Silicon Determined by Electron Transfer

Rehm, Julie M., McLendon, George L., Fauchet, Philippe M.
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Volume:
118
Language:
english
Journal:
Journal of the American Chemical Society
DOI:
10.1021/ja9538795
Date:
January, 1996
File:
PDF, 145 KB
english, 1996
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