![](/img/cover-not-exists.png)
Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates
Kolluri, Seshadri, Keller, Stacia, Brown, David, Gupta, Geetak, Mishra, Umesh K., Denbaars, Steven P., Rajan, SiddharthVolume:
108
Year:
2010
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3488641
File:
PDF, 655 KB
english, 2010