AlGaN/GaN high electron mobility transistors on 100 mm...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2011 Vol. 29; Iss. 3

AlGaN/GaN high electron mobility transistors on 100 mm silicon substrates by plasma molecular beam epitaxy

Hoke, W. E., Kennedy, T. D., Mosca, J. J., Kerr, A. J., Torabi, A., Davis-Hearns, S., LaRoche, J. R.
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Volume:
29
Year:
2011
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3549889
File:
PDF, 687 KB
english, 2011
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