AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor
Simin, Grigory, Hu, Xuhong, Tarakji, Ahmad, Zhang, Jianping, Koudymov, Alexey, Saygi, Salih, Yang, Jinwei, Khan, Asif, Shur, Michael S., Gaska, RemisVolume:
40
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.40.l1142
Date:
November, 2001
File:
PDF, 87 KB
english, 2001