Fabrication and Characteristics of Schottky Gated Field...

Japanese Journal of Applied Physics 1992 / 5 Vol. 31; Iss. Part 2, No

Fabrication and Characteristics of Schottky Gated Field Effect Transistors Utilizing Poly(1,4-naphthalene vinylene) and Poly(p-phenylene vinylene)

Ohmori, Yutaka, Muro, Keiro, Onoda, Mitsuyoshi, Yoshino, Katsumi
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Volume:
31
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.31.l646
Date:
May, 1992
File:
PDF, 426 KB
1992
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