Magnetoelectric Assisted 180° Magnetization Switching for...

Magnetoelectric Assisted 180° Magnetization Switching for Electric Field Addressable Writing in Magnetoresistive Random-Access Memory

Wang, Zhiguang, Zhang, Yue, Wang, Yaojin, Li, Yanxi, Luo, Haosu, Li, Jiefang, Viehland, Dwight
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
8
Language:
english
Journal:
ACS Nano
DOI:
10.1021/nn503369y
Date:
August, 2014
File:
PDF, 1.46 MB
english, 2014
Conversion to is in progress
Conversion to is failed