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Magnetoelectric Assisted 180° Magnetization Switching for Electric Field Addressable Writing in Magnetoresistive Random-Access Memory
Wang, Zhiguang, Zhang, Yue, Wang, Yaojin, Li, Yanxi, Luo, Haosu, Li, Jiefang, Viehland, DwightVolume:
8
Language:
english
Journal:
ACS Nano
DOI:
10.1021/nn503369y
Date:
August, 2014
File:
PDF, 1.46 MB
english, 2014