Normally-off GaN Transistors for Power Applications

Journal of Physics Conference Series 2014 / 04 Vol. 494

Normally-off GaN Transistors for Power Applications

Hilt, O, Bahat-Treidel, E, Brunner, F, Knauer, A, Zhytnytska, R, Kotara, P, Wuerfl, J
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Volume:
494
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/494/1/012001
Date:
April, 2014
File:
PDF, 533 KB
english, 2014
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