Synthesis of epitaxial silicon carbide films through the...

Physics of the Solid State 2014 / 08 Vol. 56; Iss. 8

Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review

Kukushkin, S. A., Osipov, A. V., Feoktistov, N. A.
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Volume:
56
Language:
english
Journal:
Physics of the Solid State
DOI:
10.1134/s1063783414080137
Date:
August, 2014
File:
PDF, 6.76 MB
english, 2014
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