Dislocation Reduction in GaAs on Si by Thermal Cycles and...

Japanese Journal of Applied Physics 1987 / 12 Vol. 26; Iss. Part 2, No

Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices

Okamoto, Hiroshi, Watanabe, Yoshio, Kadota, Yoshiaki, Ohmachi, Yoshiro
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Volume:
26
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.26.l1950
Date:
December, 1987
File:
PDF, 607 KB
1987
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