AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current...

IEEE Electron Device Letters 2008 / 07 Vol. 29; Iss. 7

AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

Zimmermann, Tom, Deen, David, Cao, Yu, Simon, John, Fay, Patrick, Jena, Debdeep, Xing, Huili Grace
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
29
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2008.923318
Date:
July, 2008
File:
PDF, 434 KB
english, 2008
Conversion to is in progress
Conversion to is failed