Analytical Modeling of Capacitances for GaN HEMTs,...

IEEE Transactions on Electron Devices 2014 / 03 Vol. 61; Iss. 3

Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components

Zhang, Aixi, Zhang, Lining, Tang, Zhikai, Cheng, Xiaoxu, Wang, Yan, Chen, Kevin J., Chan, Mansun
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
61
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2014.2298255
Date:
March, 2014
File:
PDF, 1.72 MB
english, 2014
Conversion to is in progress
Conversion to is failed