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[IEEE Proceedings of the 34th European Solid-State Device Research Conference - Leuven, Belgium (21-23 Sept. 2004)] Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) - Analysis of the back gate effect on the breakdown behaviour of SOI LDMOS transistors
Schwantes, S., Florian, T., Graf, M., Dietz, F., Dudek, V.Year:
2004
Language:
english
DOI:
10.1109/ESSDER.2004.1356537
File:
PDF, 285 KB
english, 2004