[IEEE 2012 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu (2012.04.23-2012.04.25)] Proceedings of Technical Program of 2012 VLSI Technology, System and Application - Superior filament formation control in HfO2 based RRAM for high-performance low-power operation of 1 µA to 20 µA at +/− 1V
Gilmer, D. C., Koveshnikov, S., Butcher, B., Bersuker, G., Kalantarian, A., Sung, M., Geer, R., Nishi, Y., Kirsch, P., Jammy, R.Year:
2012
Language:
english
DOI:
10.1109/VLSI-TSA.2012.6210102
File:
PDF, 428 KB
english, 2012