Barrier-Engineered Arsenide–Antimonide...

IEEE Electron Device Letters 2012 / 11 Vol. 33; Iss. 11

Barrier-Engineered Arsenide–Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current

Mohata, D., Rajamohanan, B., Mayer, T., Hudait, M., Fastenau, J., Lubyshev, D., Liu, A. W. K., Datta, S.
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Volume:
33
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2012.2213333
Date:
November, 2012
File:
PDF, 706 KB
english, 2012
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