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[IEEE 2010 International Workshop on Junction Technology (IWJT) - Shanghai, China (2010.05.10-2010.05.11)] 2010 International Workshop on Junction Technology Extended Abstracts - Sub-20 nm abrupt USJ formation with long ms-flash with sub-2 nm dopant motion control
Lee, K. L., Lauer, I., Ronsheim, P., Neumayer, D., McCoy, S., Kulkarni, P., Chan, J., Skordas, S., Zhu, Y., Gelpey, J., Park, Dae-gyuYear:
2010
Language:
english
DOI:
10.1109/IWJT.2010.5475001
File:
PDF, 579 KB
english, 2010