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[IEEE Proceedings of 1995 IEEE International Reliability Physics Symposium - Las Vegas, NV (1995.04.4-1995.04.6)] 33rd IEEE International Reliability Physics Symposium - Impact of velocity saturation region on nMOSFET's hot carrier reliability at elevated temperatures
Hyunsang Hwang,, Jung-Suk Goo,, Hoyup Kwon,, Hyungsoon Shin,Year:
1995
Language:
english
DOI:
10.1109/RELPHY.1995.513652
File:
PDF, 306 KB
english, 1995