[IEEE 2010 IEEE International Electron Devices Meeting...

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[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - An anomalous correlation between gate leakage current and threshold voltage fluctuation in advanced MOSFETs

Zihong Liu,, Chang, Paul, Xiaojun Yu,, Jie Deng,, Shu-Jen Han,, Shahidi, Ghavam, Haensch, Wilfried, Ken Rim,
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Year:
2010
Language:
english
DOI:
10.1109/IEDM.2010.5703291
File:
PDF, 547 KB
english, 2010
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