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[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics
Veksler, D., Bersuker, G., Chakrabarti, B., Vogel, E., Deora, S., Matthews, K., Gilmer, D. C., Li, H.-F., Gausepohl, S., Kirsch, P. D.Year:
2012
Language:
english
DOI:
10.1109/IEDM.2012.6479013
File:
PDF, 815 KB
english, 2012