[IEEE 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - San Jose, CA, USA (April 17-21, 2005)] 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - V/sub ox/E/sub ox/-driven breakdown of ultra-thin SiON gate dielectric in p+gate-pMOSFET under low stress voltage of inversion mode
Tsujikawa, S., Shiga, K., Umeda, H., Akamatsu, Y., Yugami, J., Ohno, Y., Yoneda, M.Year:
2005
Language:
english
DOI:
10.1109/RELPHY.2005.1493114
File:
PDF, 966 KB
english, 2005