[IEEE 2006 IEEE International Symposium on Power...

  • Main
  • [IEEE 2006 IEEE International Symposium...

[IEEE 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Naples, Italy (04-08 June 2006)] 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Mech1anism and Control Technology of Trench Corner Rounding by Hydrogen Annealing for Highly Reliable Trench MOSFET

Shimizu, R., Kuribayashi, H., Hiruta, R., Sudoh, K., Iwasaki, H.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2006
Language:
english
DOI:
10.1109/ISPSD.2006.1666084
File:
PDF, 3.78 MB
english, 2006
Conversion to is in progress
Conversion to is failed