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[IEEE 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Naples, Italy (04-08 June 2006)] 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Mech1anism and Control Technology of Trench Corner Rounding by Hydrogen Annealing for Highly Reliable Trench MOSFET
Shimizu, R., Kuribayashi, H., Hiruta, R., Sudoh, K., Iwasaki, H.Year:
2006
Language:
english
DOI:
10.1109/ISPSD.2006.1666084
File:
PDF, 3.78 MB
english, 2006