[IEEE 2009 International Symposium on VLSI Technology,...

  • Main
  • [IEEE 2009 International Symposium on...

[IEEE 2009 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA) - Hsinchu, Taiwan (2009.04.27-2009.04.29)] 2009 International Symposium on VLSI Technology, Systems, and Applications - The impact on device characteristics with STI formed by spin-on dielectric in high density NAND flash memory

Wong, W. Z., Fan, J. J., Jiang, J. D., Huang, C. H., Chen, C. Y., Chen, H. H., Hsu, C.C., Young, Rex, Wang, P. Y., Fujita, H., Kobayashi, H.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2009
Language:
english
DOI:
10.1109/VTSA.2009.5159268
File:
PDF, 304 KB
english, 2009
Conversion to is in progress
Conversion to is failed