[IEEE 2009 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA) - Hsinchu, Taiwan (2009.04.27-2009.04.29)] 2009 International Symposium on VLSI Technology, Systems, and Applications - The impact on device characteristics with STI formed by spin-on dielectric in high density NAND flash memory
Wong, W. Z., Fan, J. J., Jiang, J. D., Huang, C. H., Chen, C. Y., Chen, H. H., Hsu, C.C., Young, Rex, Wang, P. Y., Fujita, H., Kobayashi, H.Year:
2009
Language:
english
DOI:
10.1109/VTSA.2009.5159268
File:
PDF, 304 KB
english, 2009