4H-SiC RF power MOSFETs
Alok, D., Arnold, E., Egloff, R., Barone, J., Murphy, J., Conrad, R., Burke, J.Volume:
22
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.974582
Date:
December, 2001
File:
PDF, 43 KB
english, 2001