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[IEEE 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Suzhou, China (2013.07.15-2013.07.19)] Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Bias-temperature instability of Si and Si(Ge)-channel sub-1nm EOT p-MOS devices: Challenges and solutions
Groeseneken, G., Aoulaiche, M., Cho, M., Franco, J., Kaczer, B., Kauerauf, T., Mitard, J., Ragnarsson, Lars-Ake, Roussel, P., Toledano-Luque, M.Year:
2013
DOI:
10.1109/IPFA.2013.6599124
File:
PDF, 1.02 MB
2013