[IEEE International Conference on Indium Phosphide and Related Materials - Santa Barbara, CA, USA (12-16 May 2003)] International Conference onIndium Phosphide and Related Materials, 2003. - High-speed electroabsorption modulators using ruthenium-doped SI-InP: impact of interdiffusion-free burying technology on E/O modulation characteristics
Tamura, M., Yamanaka, T., Fukano, H., Akage, Y., Kondo, Y., Saitoh, T.Year:
2003
Language:
english
DOI:
10.1109/ICIPRM.2003.1205423
File:
PDF, 291 KB
english, 2003