[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - The 5/sup th/ generation highly rugged planar IGBT using sub-micron process technology
Yamashita, J., Yoshida, C., Fujii, C., Takanashi, K., Moritano, J.Year:
2001
Language:
english
DOI:
10.1109/ISPSD.2001.934643
File:
PDF, 453 KB
english, 2001