[IEEE 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Naples, Italy (04-08 June 2006)] 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - 4 kV, 10 A Bipolar Junction Transistors in 4H-SiC
Krishnaswami, S., Agarwal, A., Richmond, J., Chow, T.P., Geil, B., Jones, K., Scozzie, C.Year:
2006
Language:
english
DOI:
10.1109/ISPSD.2006.1666128
File:
PDF, 4.50 MB
english, 2006