InGaAs/InP DHBTs with 120-nm collector having...

IEEE Electron Device Letters 2005 / 08 Vol. 26; Iss. 8

InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, f/sub max//spl ges/450 GHz

Griffith, Z., Rodwell, M.J.W., Xiao-Ming Fang,, Loubychev, D., Ying Wu,, Fastenau, J.M., Liu, A.W.K.
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Volume:
26
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2005.852519
Date:
August, 2005
File:
PDF, 271 KB
english, 2005
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