[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Novel ZrO2/Si3N4 Dual Charge Storage Layer to Form Step-Up Potential Wells for Highly Reliable Multi-Level Cell Application
Zhang, Gang, Hwang, Wan Sik, Bobade, Santosh M., Lee, Seung-Hwan, Cho, Byung-Jin, Yoo, Won JongYear:
2007
Language:
english
DOI:
10.1109/IEDM.2007.4418869
File:
PDF, 1.53 MB
english, 2007