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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Careful examination on the asymmetric Vfb shift problem for poly-Si/HfSiON gatestack and its solution by the Hf concentration control in the dielectric near the poly-Si interface with small EOT expense
Koyama, M., Kamimuta, Y., Ino, T., Kaneko, A., Inumiya, S., Eguchi, K., Takayanagi, M., Nishiyama, A.Year:
2004
Language:
english
DOI:
10.1109/IEDM.2004.1419200
File:
PDF, 326 KB
english, 2004