Characterization of Geometric Leakage Current of $...

IEEE Electron Device Letters 2012 / 11 Vol. 33; Iss. 11

Characterization of Geometric Leakage Current of $ \hbox{GeO}_{2}$ Isolation and Effect of Forming Gas Annealing in Germanium p-n Junctions

Jung, Woo-Shik, Park, Jin-Hong, Lin, J.-Y. Jason, Wong, Simon, Saraswat, Krishna C.
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Volume:
33
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2012.2211856
Date:
November, 2012
File:
PDF, 415 KB
english, 2012
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