Corrections to "Reliability of 0.87 µm (Al,...

IEEE Electron Device Letters 1981 / 04 Vol. 2; Iss. 4

Corrections to "Reliability of 0.87 µm (Al, Ga) As double heterostructure lasers with Ga (As, Sb) active layers"

Anthony, P.J., Zilko, J.L., Hartman, R.L., Schumaker, N.E., Swaminathan, V., Wagner, W.R.
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Volume:
2
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/EDL.1981.25358
Date:
April, 1981
File:
PDF, 76 KB
english, 1981
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