[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Transient voltage induced leakage current in power diode with SIPOS resistive field plate
Yahata, A., Atsuta, M.Year:
1995
Language:
english
DOI:
10.1109/ISPSD.1995.515071
File:
PDF, 253 KB
english, 1995