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[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - 1D thickness scaling study of phase change material (Ge2Sb2Te5) using a pseudo 3-terminal device
Bae, Byoung-Jae, Kim, SangBum, Yuan Zhang,, Youngkuk Kim,, In-Gyu Baek,, Soonoh Park,, In-Seok Yeo,, Siyoung Choi,, Moon, Joo-Tae, Wong, H.-S. Philip, Kinam Kim,Year:
2009
Language:
english
DOI:
10.1109/IEDM.2009.5424412
File:
PDF, 583 KB
english, 2009