Mobility enhancement in surface channel SiGe PMOSFETs with...

IEEE Electron Device Letters 2003 / 01 Vol. 24; Iss. 1

Mobility enhancement in surface channel SiGe PMOSFETs with HfO2 gate dielectrics

Zhonghai Shi,, Onsongo, D., Onishi, K., Lee, J.C., Banerjee, S.K.
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Volume:
24
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2002.807020
Date:
January, 2003
File:
PDF, 220 KB
english, 2003
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