Investigation of trap states under Schottky contact in...

Applied Physics Letters 2014 / 03 Vol. 104; Iss. 9

Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors

Ma, Xiao-Hua, Chen, Wei-Wei, Hou, Bin, Zhang, Kai, Zhu, Jie-Jie, Zhang, Jin-Cheng, Zheng, Xue-Feng, Hao, Yue
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Volume:
104
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4867525
Date:
March, 2014
File:
PDF, 1.47 MB
english, 2014
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