[IEEE 2008 IEEE Symposium on VLSI Circuits - Honolulu, HI, USA (2008.06.18-2008.06.20)] 2008 IEEE Symposium on VLSI Circuits - A 0.7V single-supply SRAM with 0.495um2 cell in 65nm technology utilizing self-write-back sense amplifier and cascaded bit line scheme
Keiichi Kushida,, Azuma Suzuki,, Gou Fukano,, Atsushi Kawasumi,, Osamu Hirabayashi,, Yasuhisa Takeyama,, Takahiko Sasaki,, Akira Katayama,, Yuuki Fujimura,, Tomoaki Yabe,Year:
2008
Language:
english
DOI:
10.1109/vlsic.2008.4585946
File:
PDF, 256 KB
english, 2008