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[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Performance elements for 28nm gate length bulk devices with gate first high-k metal gate
Yuan, J., Gruensfelder, C., Lim, K. Y., Wallner, T., Jung, M. K, Sherony, M. J., Lee, Y. M., Chen, J., Lai, C. W., Chow, Y.T., Stein, K., Song, L. Y., Onoda, H., An, C. W., Wang, H., Moon, B. K., Kim,Year:
2010
Language:
english
DOI:
10.1109/icsict.2010.5667851
File:
PDF, 525 KB
english, 2010