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[Widerkehr & Associates 1996 Symposium on VLSI Circuits. Digest of Technical Papers - Honolulu, HI, USA (13-15 June 1996)] 1996 Symposium on VLSI Circuits. Digest of Technical Papers - A 120 mm/sup 2/ 64 Mb NAND flash memory achieving 180 ns/byte effective program speed
Jin-Ki Kim,, Koji Sakui,, Sung-Soo Lee,, Itoh, J., Suk-Chon Kwon,, Kanazawa, K., Ji-Jun Lee,, Nakamura, H., Kang-Young Kim,, Himeno, T., Jang-Rae Kim,, Kanda, K., Tae-Sung Jung,, Oshima, Y., KYear:
1996
Language:
english
DOI:
10.1109/vlsic.1996.507757
File:
PDF, 309 KB
english, 1996