Hole Transport in Strained and Relaxed SiGe Channel...

IEEE Electron Device Letters 2013 / 11 Vol. 34; Iss. 11

Hole Transport in Strained and Relaxed SiGe Channel Extremely Thin SOI MOSFETs

Khakifirooz, Ali, Cheng, Kangguo, Loubet, Nicolas, Nagumo, Toshiharu, Reznicek, Alexander, Liu, Qing, Levin, Theodore M., Edge, Lisa F., He, Hong, Kuss, James, Allibert, Frederic, Nguyen, Bich-Yen, Do
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2013.2281501
Date:
November, 2013
File:
PDF, 412 KB
english, 2013
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