[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - A novel high-conductivity IGBT (HiGT) with a short circuit capability
Mori, M., Uchino, Y., Sakano, J., Kobayashi, H.Year:
1998
Language:
english
DOI:
10.1109/ispsd.1998.702737
File:
PDF, 316 KB
english, 1998